Self-Ordering of Ge Islands on Step-Bunched Si(111) Surfaces

Sgarlata, Anna, Szkutnik, Pierre-David, Balzarotti, Adalberto, Motta, Nunzio, & Rosei, Federico (2003) Self-Ordering of Ge Islands on Step-Bunched Si(111) Surfaces. Applied Physics Letters, 83(19), pp. 4002-4004.

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By using step-bunched Si(111) surfaces as templates, we demonstrate the self-assembly of an ordered distribution of Ge islands without lithographic patterning. Initially, islands nucleate and evolve at step edges, up to complete ripening, forming long ribbons. Subsequently, island nucleation takes place at the center of flat terraces. Ge islands appear to be regularly spaced in scanning tunneling microscope images. The exploitation of this effect provides a possible route to grow ordered arrays of semiconducting nanostructures.

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63 citations in Scopus
60 citations in Web of Science®
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ID Code: 10725
Item Type: Journal Article
Refereed: Yes
DOI: 10.1063/1.1626260
ISSN: 0003-6951
Divisions: Past > QUT Faculties & Divisions > Faculty of Built Environment and Engineering
Copyright Owner: Copyright 2003 American Institute of Physics
Deposited On: 14 Nov 2007 00:00
Last Modified: 22 Aug 2014 01:09

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