Ge Dots Self-Assembling: Surfactant Mediated Growth of Ge on Sige (118) Stress-Induced Kinetic Instabilities

Berbezier, Isabelle, Ronda, Antoine, Portavoce, Alain, & Motta, Nunzio (2003) Ge Dots Self-Assembling: Surfactant Mediated Growth of Ge on Sige (118) Stress-Induced Kinetic Instabilities. Applied Physics Letters, 83(23), pp. 4833-4835.

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Abstract

The ordering of islands on naturally or artificially nanostructured surfaces is one of the most recent objectives among actual nanotechnology challenges. We show in this letter that, by a combination of two approaches, i.e., a two-step molecular beam epitaxy (MBE) deposition process and surfactant-mediated growth, we are able to obtain chains of nicely ordered ultrasmall islands of lateral size below 50 nm. The two-step MBE process consists of vicinal Si(001) surface self-patterning by SiGe growth instability and Ge dot ordering by subsequent Ge deposition on a SiGe template layer. The surfactant-mediated growth consists of submonolayer Sb deposition prior to Ge growth, in order to reduce the island size up to 25 nm. The best ordering of Ge islands is obtained when the island size matches the wavelength of the template layer.

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ID Code: 10726
Item Type: Journal Article
Refereed: Yes
DOI: 10.1063/1.1633012
ISSN: 0003-6951
Divisions: Past > QUT Faculties & Divisions > Faculty of Built Environment and Engineering
Copyright Owner: Copyright 2003 American Institute of Physics
Deposited On: 14 Nov 2007 00:00
Last Modified: 22 Aug 2014 01:11

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