Ge Dots Self-Assembling: Surfactant Mediated Growth of Ge on Sige (118) Stress-Induced Kinetic Instabilities
Berbezier, Isabelle, Ronda, Antoine, Portavoce, Alain, & Motta, Nunzio (2003) Ge Dots Self-Assembling: Surfactant Mediated Growth of Ge on Sige (118) Stress-Induced Kinetic Instabilities. Applied Physics Letters, 83(23), pp. 4833-4835.
The ordering of islands on naturally or artificially nanostructured surfaces is one of the most recent objectives among actual nanotechnology challenges. We show in this letter that, by a combination of two approaches, i.e., a two-step molecular beam epitaxy (MBE) deposition process and surfactant-mediated growth, we are able to obtain chains of nicely ordered ultrasmall islands of lateral size below 50 nm. The two-step MBE process consists of vicinal Si(001) surface self-patterning by SiGe growth instability and Ge dot ordering by subsequent Ge deposition on a SiGe template layer. The surfactant-mediated growth consists of submonolayer Sb deposition prior to Ge growth, in order to reduce the island size up to 25 nm. The best ordering of Ge islands is obtained when the island size matches the wavelength of the template layer.
Impact and interest:
Citation counts are sourced monthly from and citation databases.
These databases contain citations from different subsets of available publications and different time periods and thus the citation count from each is usually different. Some works are not in either database and no count is displayed. Scopus includes citations from articles published in 1996 onwards, and Web of Science® generally from 1980 onwards.
Citations counts from theindexing service can be viewed at the linked Google Scholar™ search.
|Item Type:||Journal Article|
|Divisions:||Past > QUT Faculties & Divisions > Faculty of Built Environment and Engineering|
|Copyright Owner:||Copyright 2003 American Institute of Physics|
|Deposited On:||14 Nov 2007 00:00|
|Last Modified:||22 Aug 2014 01:11|
Repository Staff Only: item control page