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Composition of Ge(Si) Islands in the Growth of Ge on Si(111)

Ratto, Fulvio, Rosei, Federico, Locatelli, Andrea, Cherifi, Salia, Fontana, Stefano, Heun, Stefan, Szkutnik, Pierre-David, Sgarlata, Anna, De Crescenzi, Maurizio, & Motta, Nunzio (2004) Composition of Ge(Si) Islands in the Growth of Ge on Si(111). Applied Physics Letters, 84(22), pp. 4526-4528.

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Abstract

X-ray photoemission electron microscopy (XPEEM) is used to investigate the chemical composition of Ge/Si individual islands obtained by depositing Ge on Si(111) substrates in the temperature range 460–560 degrees C. We are able to correlate specific island shapes with a definite chemical contrast in XPEEM images, at each given temperature. In particular, strained triangular islands exhibit a Si surface content of 5%–20%, whereas it grows up to 30%–40% for "atoll-like" structures. The island's stage of evolution is shown to be correlated with its surface composition. Finally, by plotting intensity contour maps, we find that island centers are rich in Si.

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34 citations in Web of Science®

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219 since deposited on 14 Nov 2007
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ID Code: 10727
Item Type: Journal Article
DOI: 10.1063/1.1758304
ISSN: 0003-6951
Divisions: Past > QUT Faculties & Divisions > Faculty of Built Environment and Engineering
Copyright Owner: Copyright 2004 American Institute of Physics
Copyright Statement: Reproduced in accordance with the copyright policy of the publisher.
Deposited On: 14 Nov 2007
Last Modified: 29 Feb 2012 23:30

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