Composition of Ge(Si) Islands in the Growth of Ge on Si(111)
Ratto, Fulvio, Rosei, Federico, Locatelli, Andrea, Cherifi, Salia, Fontana, Stefano, Heun, Stefan, Szkutnik, Pierre-David, Sgarlata, Anna, De Crescenzi, Maurizio, & Motta, Nunzio (2004) Composition of Ge(Si) Islands in the Growth of Ge on Si(111). Applied Physics Letters, 84(22), pp. 4526-4528.
X-ray photoemission electron microscopy (XPEEM) is used to investigate the chemical composition of Ge/Si individual islands obtained by depositing Ge on Si(111) substrates in the temperature range 460–560 degrees C. We are able to correlate specific island shapes with a definite chemical contrast in XPEEM images, at each given temperature. In particular, strained triangular islands exhibit a Si surface content of 5%–20%, whereas it grows up to 30%–40% for "atoll-like" structures. The island's stage of evolution is shown to be correlated with its surface composition. Finally, by plotting intensity contour maps, we find that island centers are rich in Si.
Impact and interest:
Citation counts are sourced monthly from and citation databases.
These databases contain citations from different subsets of available publications and different time periods and thus the citation count from each is usually different. Some works are not in either database and no count is displayed. Scopus includes citations from articles published in 1996 onwards, and Web of Science® generally from 1980 onwards.
Citations counts from theindexing service can be viewed at the linked Google Scholar™ search.
|Item Type:||Journal Article|
|Divisions:||Past > QUT Faculties & Divisions > Faculty of Built Environment and Engineering|
|Copyright Owner:||Copyright 2004 American Institute of Physics|
|Deposited On:||14 Nov 2007|
|Last Modified:||22 Aug 2014 01:12|
Repository Staff Only: item control page