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Influence of patterning on the nucleation of Ge islands on Si and SiO2 surfaces

Szkutnik, Pierre-David, Sgarlata, Anna, Motta, Nunzio, Placidi, E., Berbezier, Isabelle, & Balzarotti, Adalberto (2007) Influence of patterning on the nucleation of Ge islands on Si and SiO2 surfaces. Surface Science, 601(13), pp. 2778-2782.

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Abstract

Surface patterning is expected to influence the nucleation site of deposited nanostructures. In the present study, clean Si and SiO2 surfaces were patterned by a nanolithographic process using a Focused Ion Beam (FIB). Ge was evaporated in ultra high vacuum at 873 K on these substrates, resulting in the formation of island arrays. Based on scanning tunneling microscopy and atomic force microscopy images, a statistical analysis was performed in order to highlight the effect of patterning on the size distribution of islands compared to a non-patterned surface. We find that the self-organization mechanism on patterned substrates results in a very good arrangement and positioning of Ge nanostructures, depending on growth conditions and holes distance, both on Si and SiO2 surfaces.

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19 citations in Scopus
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15 citations in Web of Science®

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95 since deposited on 11 Mar 2008
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ID Code: 12920
Item Type: Journal Article
Keywords: patterning, nucleation, Ge, Si, Quantum dots, FIB, STM
DOI: 10.1016/j.susc.2006.12.090
ISSN: 0039-6028
Subjects: Australian and New Zealand Standard Research Classification > PHYSICAL SCIENCES (020000) > CONDENSED MATTER PHYSICS (020400) > Surfaces and Structural Properties of Condensed Matter (020406)
Australian and New Zealand Standard Research Classification > ENGINEERING (090000) > ELECTRICAL AND ELECTRONIC ENGINEERING (090600) > Microelectronics and Integrated Circuits (090604)
Divisions: Past > QUT Faculties & Divisions > Faculty of Built Environment and Engineering
Copyright Owner: Copyright 2007 Elsevier
Copyright Statement: Reproduced in accordance with the copyright policy of the publisher.
Deposited On: 11 Mar 2008
Last Modified: 29 Feb 2012 23:39

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