Current-voltage characteristics of poly(3-hexylthiophene) diodes at room temperature

Giulianini, Michele, Waclawik, Eric R., Bell, John M., & Motta, Nunzio (2009) Current-voltage characteristics of poly(3-hexylthiophene) diodes at room temperature. Applied Physic Letters, 94(8), 083302-083303.

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Abstract

We report on the analysis of current-voltage characteristics of regioregular poly(3-hexylthiophene) diodes. Experimental curves were fitted to two models, to take into account at low-moderate electric
fields Schottky behavior mixed with space charge limited current (SCLC) regime and, at higher
fields, trap-free SCLC. The results provide a description of IV curves over five decades, along with
the determination of zero field and effective mobility and the field dependence prefactor. Forward
and reverse IV measurements highlighted the presence of shallow and deep localized states inside
the band gap. The latter enhance the current over time and have been modeled as an inductor like
element.

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ID Code:	18335
Item Type:	Journal Article
Keywords:	P3HT, diode, SCLC, Modelling
DOI:	10.1063/1.3086882
ISSN:	0003-6951
Divisions:	Past > QUT Faculties & Divisions > Faculty of Built Environment and Engineering Past > QUT Faculties & Divisions > Faculty of Science and Technology Past > Schools > School of Engineering Systems
Copyright Owner:	Copyright (2009) American Institute of Physics.
Copyright Statement:	Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in APL and may be found at (http://link.aip.org/link/?APL/94/083302).
Deposited On:	26 Feb 2009 11:29
Last Modified:	29 Feb 2012 23:54

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