Self-assembly of Ge quantum dots on silicon : an example of controlled nanomanufacturing
Bernardi, Marco, Sgarlata, Anna, Fanfoni, Massimo, Persichetti, Luca, Motta, Nunzio, & Balzarotti, Adalberto (2009) Self-assembly of Ge quantum dots on silicon : an example of controlled nanomanufacturing. Superlattices and Microstructures, 46(1-2), pp. 318-323.
We have grown Ge dots by physical vapor deposition on step bunched Si(111), vicinal Si(100) and oxidized Si(100) surfaces. A control of their one- and two-dimensional ordering was achieved through the combination of top-down patterning techniques (Focused Ion Beam milling) and naturally occurring instabilities. We studied the growth kinetics and self-organization of the islands using Scanning Tunnelling Microscopy in UHV and Atomic Force Microscopy, and we used a software routine to analyze the in-plane ordering of the islands on selected images. We focused on the study of the first nucleation stages of the dots, and attempted to correlate the observed behavior with the properties of high-miscut vicinal Si(100) surfaces. The relevance of this research to quantum-dots based technology is discussed.
Citation countsare sourced monthly fromand citation databases.
These databases contain citations from different subsets of available publications and different time periods and thus the citation count from each is usually different. Some works are not in either database and no count is displayed. Scopus includes citations from articles published in 1996 onwards, and Web of Science generally from 1980 onwards.
Citations counts from theindexing service can be viewed at the linked Google Scholar™ search.
Full-text downloadsdisplays the total number of times this work’s files (e.g., a PDF) have been downloaded from QUT ePrints as well as the number of downloads in the previous 365 days. The count includes downloads for all files if a work has more than one.
Repository Staff Only: item control page