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Temperature and electric field dependent mobility in poly„3-hexylthiophene diodes

Giulianini, Michele, Waclawik, Eric R., Bell, John M., & Motta, Nunzio (2010) Temperature and electric field dependent mobility in poly„3-hexylthiophene diodes. Journal of Applied Physics, 108(1), 014512-1-014512-4.

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Abstract

Current-voltage (I-V) curves of Poly(3-hexyl-thiophene) (P3HT) diodes have been collected to investigate the polymer hole-dominated charge transport. At room temperature and at low electric fields the I-V characteristic is purely Ohmic whereas at medium-high electric fields, experimental data shows that the hole transport is Trap Dominated - Space Charge Limited Current (TD-SCLC). In this regime, it is possible to extract the I-V characteristic of the P3HT/Al junction showing the ideal Schottky diode behaviour over five orders of magnitude. At high-applied electric fields, holes’ transport is found to be in the trap free SCLC regime. We have measured and modelled in this regime the holes’ mobility to evaluate its dependence from the electric field applied and the temperature of the device.

Impact and interest:

8 citations in Scopus
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7 citations in Web of Science®

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ID Code: 33176
Item Type: Journal Article
Keywords: P3HT, SCLC, mobility, diode
DOI: 10.1063/1.3460111
ISSN: 0021-8979
Subjects: Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Molecular and Organic Electronics (100702)
Divisions: Past > Schools > Chemistry
Past > QUT Faculties & Divisions > Faculty of Built Environment and Engineering
Past > QUT Faculties & Divisions > Faculty of Science and Technology
Past > Schools > School of Engineering Systems
Copyright Owner: Copyright 2010 American Institute of Physics
Deposited On: 20 Jul 2010 11:16
Last Modified: 01 Mar 2012 00:16

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