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Ordering of Ge islands on Si(001) substrates patterned by nanoindentation

Persichetti, Luca, Capasso, Andrea, Ruffell, Simon, Sgarlata, Anna, Fanfoni, Massimo, Motta, Nunzio, & Balzarotti, Adalberto (2010) Ordering of Ge islands on Si(001) substrates patterned by nanoindentation. Thin Solid Films. (In Press)

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    Abstract

    Spatial organization of Ge islands, grown by physical vapor deposition, on prepatterned Si(001) substrates has been investigated. The substrates were patterned prior to Ge deposition by nanoindentation. Characterization of Ge dots is performed by atomic force microscopy and scanning electron microscopy. The nanoindents act as trapping sites, allowing ripening of Ge islands at those locations during subsequent deposition and diffusion of Ge on the surface. The results show that island ordering is intrinsically linked to the nucleation and growth at indented sites and it strongly depends on pattern parameters.

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    ID Code: 37312
    Item Type: Journal Article
    Keywords: silicon, germanium islands, self-assembly, nanoparticles, nanoindentation, atomic force microscopy, nucleation, growth, germanium dots
    DOI: 10.1016/j.tsf.2011.01.390
    ISSN: 0040-6090
    Subjects: Australian and New Zealand Standard Research Classification > PHYSICAL SCIENCES (020000) > CONDENSED MATTER PHYSICS (020400) > Surfaces and Structural Properties of Condensed Matter (020406)
    Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanofabrication Growth and Self Assembly (100706)
    Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanomaterials (100708)
    Divisions: Past > QUT Faculties & Divisions > Faculty of Built Environment and Engineering
    Past > Schools > School of Engineering Systems
    Copyright Owner: Copyright 2010 Elsevier
    Deposited On: 22 Feb 2011 09:44
    Last Modified: 11 Aug 2011 03:22

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