Composition of Ge — Si – islands in the growth of Ge on Si — 111 – by x-ray spectromicroscopy
Ratto, Fulvio, Rosei, Federico, Locatelli, Andrea, Cherifi, Salia, Fontana, Stefano, Heun, Stefan, Szkutnik, Pierre-David , Sgarlata, Anna , De Crescenzi, Maurizio , & Motta, Nunzio (2005) Composition of Ge — Si – islands in the growth of Ge on Si — 111 – by x-ray spectromicroscopy. Journal of Applied Physics, 97(4), 043516.
The stoichiometry of Ge/Si islands grown on Sis111d substrates at temperatures ranging from 460 to 560 degrees Celsius was investigated by x-ray photoemission electron microscopy sXPEEMd. By developing a specific analytical framework, quantitative information on the surface Ge/Si stoichiometry was extracted from laterally resolved XPEEM Si 2p and Ge 3d spectra, exploiting the chemical sensitivity of the technique. Our data show the existence of a correlation between the base area of the self-assembled islands and their average surface Si content: the larger the lateral dimensions of the 3D structures, the higher their relative Si concentration. The deposition temperature determines the characteristics of this relation, pointing to the thermal activation of kinetic diffusion processes.
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|Item Type:||Journal Article|
|Keywords:||Ge, Si, quantum dots, X, ray spectroscopy, synchrotron radiation|
|Subjects:||Australian and New Zealand Standard Research Classification > ENGINEERING (090000) > ELECTRICAL AND ELECTRONIC ENGINEERING (090600) > Electrical and Electronic Engineering not elsewhere classified (090699)|
Australian and New Zealand Standard Research Classification > PHYSICAL SCIENCES (020000) > CONDENSED MATTER PHYSICS (020400) > Surfaces and Structural Properties of Condensed Matter (020406)
|Divisions:||Past > QUT Faculties & Divisions > Faculty of Science and Technology|
|Copyright Owner:||Copyright 2005 American Institute of Physics|
|Copyright Statement:||Reproduced in accordance with the copyright policy of the publisher.|
|Deposited On:||04 May 2006|
|Last Modified:||29 Feb 2012 23:17|
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