QUT ePrints

Composition of Ge — Si – islands in the growth of Ge on Si — 111 – by x-ray spectromicroscopy

Ratto, Fulvio, Rosei, Federico, Locatelli, Andrea, Cherifi, Salia, Fontana, Stefano, Heun, Stefan, Szkutnik, Pierre-David, Sgarlata, Anna, De Crescenzi, Maurizio, & Motta, Nunzio (2005) Composition of Ge — Si – islands in the growth of Ge on Si — 111 – by x-ray spectromicroscopy. Journal of Applied Physics, 97(4), 043516.

View at publisher

Abstract

The stoichiometry of Ge/Si islands grown on Sis111d substrates at temperatures ranging from 460 to 560 degrees Celsius was investigated by x-ray photoemission electron microscopy sXPEEMd. By developing a specific analytical framework, quantitative information on the surface Ge/Si stoichiometry was extracted from laterally resolved XPEEM Si 2p and Ge 3d spectra, exploiting the chemical sensitivity of the technique. Our data show the existence of a correlation between the base area of the self-assembled islands and their average surface Si content: the larger the lateral dimensions of the 3D structures, the higher their relative Si concentration. The deposition temperature determines the characteristics of this relation, pointing to the thermal activation of kinetic diffusion processes.

Impact and interest:

30 citations in Scopus
Search Google Scholar™
33 citations in Web of Science®

Citation countsare sourced monthly from Scopus and Web of Science® citation databases.

These databases contain citations from different subsets of available publications and different time periods and thus the citation count from each is usually different. Some works are not in either database and no count is displayed. Scopus includes citations from articles published in 1996 onwards, and Web of Science® generally from 1980 onwards.

Citations counts from the Google Scholar™ indexing service can be viewed at the linked Google Scholar™ search.

Full-text downloads:

162 since deposited on 04 May 2006
20 in the past twelve months

Full-text downloadsdisplays the total number of times this work’s files (e.g., a PDF) have been downloaded from QUT ePrints as well as the number of downloads in the previous 365 days. The count includes downloads for all files if a work has more than one.

ID Code: 4027
Item Type: Journal Article
Keywords: Ge, Si, quantum dots, X, ray spectroscopy, synchrotron radiation
DOI: 10.1063/1.1832747
ISSN: 0021-8979
Subjects: Australian and New Zealand Standard Research Classification > ENGINEERING (090000) > ELECTRICAL AND ELECTRONIC ENGINEERING (090600) > Electrical and Electronic Engineering not elsewhere classified (090699)
Australian and New Zealand Standard Research Classification > PHYSICAL SCIENCES (020000) > CONDENSED MATTER PHYSICS (020400) > Surfaces and Structural Properties of Condensed Matter (020406)
Divisions: Past > QUT Faculties & Divisions > Faculty of Science and Technology
Copyright Owner: Copyright 2005 American Institute of Physics
Copyright Statement: Reproduced in accordance with the copyright policy of the publisher.
Deposited On: 04 May 2006
Last Modified: 29 Feb 2012 23:17

Export: EndNote | Dublin Core | BibTeX

Repository Staff Only: item control page