Reversed bias Pt/nanostructured ZnO Schottky diode with enhanced electric field for hydrogen sensing

Shafiei, M., Yu, J., Arsat, R., Kalantar-zadeh, K., Comini, E., Ferroni, M., Sberveglieri, G., & Wlodarski, W. (2010) Reversed bias Pt/nanostructured ZnO Schottky diode with enhanced electric field for hydrogen sensing. Sensors and Actuators B: Chemical, 146(2), pp. 507-512.

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Abstract

In this paper, the effect of electric field enhancement on Pt/nanostructured ZnO Schottky diode based hydrogen sensors under reverse bias condition has been investigated. Current-voltage characteristics of these diodes have been studied at temperatures from 25 to 620 °C and their free carrier density concentration was estimated by exposing the sensors to hydrogen gas. The experimental results show a significantly lower breakdown voltage in reversed bias current-voltage characteristics than the conventional Schottky diodes and also greater lateral voltage shift in reverse bias operation than the forward bias. This can be ascribed to the increased localized electric fields emanating from the sharp edges and corners of the nanostructured morphologies. At 620 °C, voltage shifts of 114 and 325 mV for 0.06% and 1% hydrogen have been recorded from dynamic response under the reverse bias condition. © 2010 Elsevier B.V. All rights reserved.

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ID Code: 44201
Item Type: Journal Article
Refereed: Yes
Keywords: Electric field, Gas sensors, Hydrogen, Nanostructured ZnO, Reverse bias, Schottky
DOI: 10.1016/j.snb.2009.12.028
Divisions: Past > QUT Faculties & Divisions > Faculty of Science and Technology
Copyright Owner: Elsevier
Deposited On: 29 Aug 2011 05:57
Last Modified: 29 Feb 2012 14:31

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