Reverse biased Pt/nanostructured MoO3/SiC Schottky diode based hydrogen gas sensors
Yu, Jerry, Ippolito, Samuel, Shafiei, Mahnaz, Dhawan, Deepak, Wlodarski, Wojtek, & Kalantar-zadeh, Kourosh (2009) Reverse biased Pt/nanostructured MoO3/SiC Schottky diode based hydrogen gas sensors. Applied Physics Letters, 94(1), pp. 1-3.
Pt/nanostructured molybdenum oxide (MoO3) /SiC Schottky diode based gas sensors were fabricated for hydrogen (H2) gas sensing. Due to the enhanced performance, which is ascribed to the application of MoO3 nanostructures, these devices were used in reversed bias. MoO3 characterization by scanning electron microscopy showed morphology of randomly orientated nanoplatelets with thicknesses between 50 and 500 nm. An α-Β mixed phase crystallographic structure of MoO3 was characterized by x-ray diffraction. At 180 °C, 1.343 V voltage shift in the reverse I-V curve and a Pt/ MoO3 barrier height change of 20 meV were obtained after exposure to 1% H2 gas in synthetic air. © 2009 American Institute of Physics.
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|Item Type:||Journal Article|
|Subjects:||Australian and New Zealand Standard Research Classification > MATHEMATICAL SCIENCES (010000)|
Australian and New Zealand Standard Research Classification > PHYSICAL SCIENCES (020000)
Australian and New Zealand Standard Research Classification > ENGINEERING (090000)
|Copyright Owner:||American Institute of Physics|
|Deposited On:||26 Aug 2011 12:19|
|Last Modified:||01 Mar 2012 00:32|
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