A hydrogen gas sensor based on Pt/nanostructured WO3/SiC Schottky diode
Shafiei, Mahnaz, Sadek, Abu Z, Yu, Jerry, Latham, Kay, Breedon, Michael, McCulloch, Dougal, Kalantar-zadeh, Kourosh, & Wlodarski, Wojtek (2011) A hydrogen gas sensor based on Pt/nanostructured WO3/SiC Schottky diode. Sensor Letters, 9(1), pp. 11-15.
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Pt/nanostructured WO3/SiC Schottky diodes were fabricated and applied for hydrogen gas sensing applications. The nanostructured WO3 films were synthesized from tungsten coated SiC substrates via an acid-etching method using a 1.5 M HNO3 solution for 1 hr, 2 hrs and 3 hrs duration. Scanning electron microscopy of the developed films revealed platelet crystals with thicknesses in the order of 20-60 nm and lengths between 100-700 nm. X-ray diffraction analysis revealed that the rate of oxidation of tungsten increases as the duration of acid-etching increases. The devices were tested towards hydrogen gas balanced in air at different temperatures from 25°C to 200°C. At 200°C, voltage shifts of 0.45 V, 0.93 V and 2.37 V were recorded for devices acid-etched for 1 hr, 2 hrs and 3 hrs duration, respectively upon exposure to 1% hydrogen, under a constant forward bias current of 500 µA.
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|Item Type:||Journal Article|
|Keywords:||Nanostructured WO3, Gas Sensors, Schottky Diode, Hydrogen, Acid-etching|
|Divisions:||Past > QUT Faculties & Divisions > Faculty of Built Environment and Engineering|
|Copyright Owner:||Copyright 2011 Please consult the authors.|
|Deposited On:||29 Sep 2011 01:21|
|Last Modified:||09 Nov 2016 23:58|
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