Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates

Yu, J., Chen, G., Li, C.X., Shafiei, M., Ou, J., du Plessis, J., Kalantar-zadeh, K., Lai, P.T., & Wlodarski, W. (2010) Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates. Procedia Engineering, 5, pp. 147-151.

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In this paper, we fabricated Pt/tantalum oxide (Ta2O5) Schottky diodes for hydrogen sensing applications. Thin (4 nm) layer of Ta2O5 was deposited on silicon (Si) and silicon carbide (SiC) substrates by radio frequency (RF) sputtering technique. We compared the performance of these sensors at different elevated temperatures of 100 ∘C and 150 ∘C. At these temperatures, the sensor based on SiC exhibited a larger sensitivity while the sensor based on Si exhibited a faster response toward hydrogen gas. We discussed herein, the responses exhibited by the Pt/Ta2O5 based Schottky diodes demonstrated a promising potential for hydrogen sensing applications.

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2 citations in Web of Science®

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ID Code: 47547
Item Type: Journal Article
Refereed: Yes
Additional Information: Proceedings of Eurosensors XXIV, September 5-8, 2010, Linz, Austria
Keywords: Tantalum oxide, RF sputtering, Schottky diode, Gas sensor, Hydrogen
DOI: 10.1016/j.proeng.2010.09.069
ISSN: 1877-7058
Divisions: Past > QUT Faculties & Divisions > Faculty of Built Environment and Engineering
Deposited On: 08 Dec 2011 23:41
Last Modified: 15 Jul 2014 06:07

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