Hydrogen gas sensing performance of a Pt/graphene/SiC device
Shafiei, M., Shin, K., Yu, J., Han, S.H., Jong, J.W., Motta, N., du Plessis, J., & Wlodarski, W. (2011) Hydrogen gas sensing performance of a Pt/graphene/SiC device. In Xia, Shanhong, Bao, Minhang, & Fan, Long-Sheng (Eds.) Proceedings of the 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, IEEE, China National Convention Center, Beijing, pp. 170-173.
In this work, we present the development of a Pt/graphene/SiC device for hydrogen gas sensing. A single layer of graphene was deposited on 6H-SiC via chemical vapor deposition. The presence of graphene C-C bonds was observed via X-ray photoelectron spectroscopy analysis. Current-voltage characteristics of the device were measured at the presence of hydrogen at different temperatures, from 25°C to 170°C. The dynamic response of the device was recorded towards hydrogen gas at an optimum temperature of 130°C. A voltage shift of 191 mV was recorded towards 1% hydrogen at −1 mA constant current.
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|Item Type:||Conference Paper|
|Keywords:||Chemical Vapor Deposition, Graphene, Hydrogen, Sensor|
|Subjects:||Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanoelectronics (100705)|
Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanomaterials (100708)
Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanoscale Characterisation (100712)
|Divisions:||Past > QUT Faculties & Divisions > Faculty of Built Environment and Engineering|
Past > Schools > School of Engineering Systems
|Copyright Owner:||Copyright 2011 IEEE|
|Copyright Statement:||Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Deposited On:||16 Dec 2011 09:01|
|Last Modified:||20 Jan 2012 00:38|
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