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Early Stage of Ge Growth on Si(001) Vicinal Surfaces with 8 degrees Miscut Along[1-10]

Szkutnik, Pierre-David , Sgarlata, Anna , Ronda, Antoine , Motta, Nunzio, Berbezier, Isabelle , & Balzarotti, Adalberto (2007) Early Stage of Ge Growth on Si(001) Vicinal Surfaces with 8 degrees Miscut Along[1-10]. Physical Review B (Condensed Matter and Materials Physics), 75(3), 033305.

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Abstract

The atomistic pathway towards the growth of semiconductor heterostructures on vicinal surfaces is investigated in a special experiment. A step-by-step study of the early stages of Ge deposition at T=600 degrees Celsius on a 8 degrees off Si(001) surface miscut along [110] is performed by scanning tunneling microscopy (STM). The microscopic processes occurring during growth are identified. Highly resolved STM images show how double height steps, which characterize the clean substrate, evolve by a step flow process generated by ad-dimer chains located at specific positions. This process leads to the formation of metastable single domains until the development of {105} faceted ripples extending along the whole surface in the miscut direction.

Impact and interest:

23 citations in Scopus
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25 citations in Web of Science®

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184 since deposited on 20 Oct 2006
16 in the past twelve months

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ID Code: 5273
Item Type: Journal Article
Keywords: Si(100), Ge, Vicinal surfaces, Heterostructures, Crystal growth
DOI: 10.1103/PhysRevB.75.033305
ISSN: 1550-235X
Subjects: Australian and New Zealand Standard Research Classification > PHYSICAL SCIENCES (020000) > CONDENSED MATTER PHYSICS (020400) > Surfaces and Structural Properties of Condensed Matter (020406)
Divisions: Past > QUT Faculties & Divisions > Faculty of Built Environment and Engineering
Past > QUT Faculties & Divisions > Faculty of Science and Technology
Copyright Owner: Copyright 2007 American Physical Society
Copyright Statement: Reproduced in accordance with the copyright policy of the publisher.
Deposited On: 20 Oct 2006
Last Modified: 29 Feb 2012 23:39

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