Electronic transport properties of hot-pressed B6Si
Wood, C., Emin, D., Feigelson, R.S., & Mackinnon, I.D.R. (1987) Electronic transport properties of hot-pressed B6Si. In Aselage, T., Emin, D., & Woods, C. (Eds.) Novel Refractory Semiconductors, Cambridge University Press, Anaheim CA, pp. 33-38.
Measurements of the electrical conductivity, Seebeck coefficient and Hall mobility from -300K to -1300K have been carried out on multiphase hotpressed samples of the nominal composition B6Si. In all samples the conductivity and the p-type Seebeck coefficient both increase smoothly with increasing temperature. By themselves, these facts suggest small-polaronic hopping between inequivalent sites. The measured Hall mobilities are always low, but vary in sign. A possible explanation is offered for this anomalous behavior.
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|Item Type:||Conference Paper|
|Keywords:||electrical conductivity, Seebeck coefficient, Hall mobility, electron microscopy, boron silicide|
|Subjects:||Australian and New Zealand Standard Research Classification > ENGINEERING (090000) > MATERIALS ENGINEERING (091200) > Compound Semiconductors (091203)|
|Divisions:||Current > Institutes > Institute for Future Environments|
|Deposited On:||04 Mar 2013 22:45|
|Last Modified:||04 Mar 2013 22:45|
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