Electronic transport properties of hot-pressed B6Si

Wood, C., Emin, D., Feigelson, R.S., & Mackinnon, I.D.R. (1987) Electronic transport properties of hot-pressed B6Si. In Aselage, T., Emin, D., & Woods, C. (Eds.) Novel Refractory Semiconductors, Cambridge University Press, Anaheim CA, pp. 33-38.

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Measurements of the electrical conductivity, Seebeck coefficient and Hall mobility from -300K to -1300K have been carried out on multiphase hotpressed samples of the nominal composition B6Si. In all samples the conductivity and the p-type Seebeck coefficient both increase smoothly with increasing temperature. By themselves, these facts suggest small-polaronic hopping between inequivalent sites. The measured Hall mobilities are always low, but vary in sign. A possible explanation is offered for this anomalous behavior.

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ID Code: 57610
Item Type: Conference Paper
Refereed: Yes
Keywords: electrical conductivity, Seebeck coefficient, Hall mobility, electron microscopy, boron silicide
DOI: 10.1557/PROC-97-33
Subjects: Australian and New Zealand Standard Research Classification > ENGINEERING (090000) > MATERIALS ENGINEERING (091200) > Compound Semiconductors (091203)
Divisions: Current > Institutes > Institute for Future Environments
Deposited On: 04 Mar 2013 22:45
Last Modified: 04 Mar 2013 22:45

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