Chemical vapor deposited boron carbide : growth by a vapor-liquid-solid process

Mackinnon, I.D.R. & Smith, K.L. (1987) Chemical vapor deposited boron carbide : growth by a vapor-liquid-solid process. In Aselage, T., Emin, D., & Wood, C. (Eds.) Novel Refractory Semiconductors, Cambridge University Press, Anaheim, CA, pp. 127-132.

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Abstract

Detailed analytical electron microscope (AEM) studies of yellow whiskers produced by chemical vapor deposition (CVD)1 show that two basic types of whiskers are produced at low temperatures (between 1200°C and 1400°C) and low boron to carbon gas ratios. Both whisker types show planar microstructures such as twin planes and stacking faults oriented parallel to, or at a rhombohedral angle to, the growth direction. For both whisker types, the presence of droplet-like terminations containing both Si and Ni indicate that the growth process during CVD is via a vapor-liquid-solid (VLS) mechanism.

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ID Code: 57614
Item Type: Conference Paper
Refereed: Yes
Keywords: boron carbide whiskers, chemical vapour deposition, VLS growth, trace metals, droplet termination, Silicon, Nickel
DOI: 10.1557/PROC-97-127
Subjects: Australian and New Zealand Standard Research Classification > ENGINEERING (090000) > MATERIALS ENGINEERING (091200) > Ceramics (091201)
Australian and New Zealand Standard Research Classification > ENGINEERING (090000) > MATERIALS ENGINEERING (091200) > Compound Semiconductors (091203)
Divisions: Current > Institutes > Institute for Future Environments
Deposited On: 04 Mar 2013 22:41
Last Modified: 04 Mar 2013 22:41

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