The correlation between electric field emission phenomenon and Schottky contact reverse bias characteristics in nanostructured systems

Yu, J., Liu, J., Breedon, M., Shafiei, M., Wen, H., Li, Y.X., Wlodarski, W., Zhang, G., & Kalantar-zadeh, K. (2011) The correlation between electric field emission phenomenon and Schottky contact reverse bias characteristics in nanostructured systems. Journal of Applied Physics, 109(11), p. 114316.

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Abstract

Two different morphologies of nanotextured molybdenum oxide were deposited by thermal evaporation. By measuring their field emission (FE) properties, an enhancement factor was extracted. Subsequently, these films were coated with a thin layer of Pt to form Schottky contacts. The current-voltage (I-V) characteristics showed low magnitude reverse breakdown voltages, which we attributed to the localized electric field enhancement. An enhancement factor was obtained from the I-V curves. We will show that the enhancement factor extracted from the I-V curves is in good agreement with the enhancement factor extracted from the FE measurements.

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8 citations in Web of Science®

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ID Code: 59216
Item Type: Journal Article
Refereed: Yes
DOI: 10.1063/1.3583658
ISSN: 0021-8979
Subjects: Australian and New Zealand Standard Research Classification > CHEMICAL SCIENCE (030000) > ANALYTICAL CHEMISTRY (030100) > Sensor Technology (Chemical aspects) (030107)
Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanomaterials (100708)
Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanoscale Characterisation (100712)
Divisions: Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 06 May 2013 22:35
Last Modified: 06 May 2013 22:35

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