Pt/Nanostructured RuO2/SiC Schottky Diode based hydrogen gas sensors

Yu, J., Shafiei, M., Comini, E., Ferroni, M., Sberveglieri, G., Latham, K., Kalantar-Zadeh, K., & Wlodarski, W. (2011) Pt/Nanostructured RuO2/SiC Schottky Diode based hydrogen gas sensors. Sensor Letters, 9(2), pp. 797-800.

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Abstract

In this paper, we report the development of novel Pt/nanostructured RuO2/SiC Schottky diode based sensors for hydrogen gas applications. The nanostructured ruthenium oxide thin films were deposited on SiC substrates using radio frequency sputtering technique. Scanning electron microscopy revealed the sputtered RuO2 layer consists of nano-cubular structures with dimensions ranging between 10 and 50 nm. X-ray diffraction confirmed the presence of tetragonal ruthenium (IV) oxide, with preferred orientation along the (101) lattice plane. The current-voltage characteristics of the sensors were investigated towards hydrogen gas in synthetic air at different temperatures from 25 °C to 240 °C. The dynamic responses of the sensors were studied at an optimum temperature of 240 °C and a voltage shift of 304 mV was recorded toward 1% hydrogen gas.

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2 citations in Web of Science®

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ID Code: 59220
Item Type: Journal Article
Refereed: Yes
Keywords: Gas Sensor, Hydrogen, Ruthenium Oxide, Schottky Diode, Nanostructures
DOI: 10.1166/sl.2011.1617
ISSN: 15461971
Subjects: Australian and New Zealand Standard Research Classification > CHEMICAL SCIENCE (030000) > ANALYTICAL CHEMISTRY (030100) > Sensor Technology (Chemical aspects) (030107)
Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanomaterials (100708)
Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanoscale Characterisation (100712)
Divisions: Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 02 May 2013 22:03
Last Modified: 12 Jul 2013 02:58

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