Hydrogen gas sensing performance of Pt/SnO2 nanowires/SiC MOS devices
Shafiei, M., Kalantar-zadeh, K., Wlodarski, W., Comini, E., Ferroni, M., Sberveglieri, G., Kaciulis, S., & Pandolfi, L. (2008) Hydrogen gas sensing performance of Pt/SnO2 nanowires/SiC MOS devices. International Journal on Smart Sensing and Intelligent Systems, 1(3), pp. 771-783.
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This paper presents material and gas sensing properties of Pt/SnO2 nanowires/SiC metal oxide semiconductor devices towards hydrogen. The SnO2 nanowires were deposited onto the SiC substrates by vapour-liquid-solid growth mechanism. The material properties of the sensors were investigated using scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. The current-voltage characteristics have been analysed. The effective change in the barrier height for 1% hydrogen was found to be 142.91 meV. The dynamic response of the sensors towards hydrogen at different temperatures has also been studied. At 530°C, voltage shift of 310 mV for 1% hydrogen was observed.
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|Item Type:||Journal Article|
|Keywords:||Gas sensor, Hydrogen, Nanowires, SnO2, MOS, Schottky, XPS, TEM, SEM|
|Subjects:||Australian and New Zealand Standard Research Classification > CHEMICAL SCIENCE (030000) > ANALYTICAL CHEMISTRY (030100) > Sensor Technology (Chemical aspects) (030107)
Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanomaterials (100708)
Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanoscale Characterisation (100712)
|Copyright Owner:||Copyrighyt 2008 International Journal on Smart Sensing and Intelligent Systems|
|Deposited On:||30 Apr 2013 22:57|
|Last Modified:||05 May 2013 05:01|
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