A study of hydrogen gas sensing performance of Pt/Graphene/GaN devices

Yu, J., Shafiei, M., Ou, J., Shin, K., & Wlodarski, W. (2011) A study of hydrogen gas sensing performance of Pt/Graphene/GaN devices. In Lewis, Elfred (Ed.) Proceedings of the IEEE SENSORS 2011 Conference, IEEE, Limerick, Ireland, pp. 1017-1020.

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Abstract

In this work, we present an investigation on Pt/graphene/GaN devices for hydrogen gas sensing applications. The graphene layer was deposited on GaN substrate using a chemical vapour deposition (CVD) technique and was characterised via Raman and X-ray photoelectron spectroscopy. The current-voltage (I-V) and dynamic response of the developed devices were investigated in forward and reverse bias operation at an optimum temperature of 160°C. Voltage shifts of 661.1 and 484.9 mV were recorded towards 1% hydrogen at forward and reverse constant bias current of 1 mA, respectively.

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ID Code: 59563
Item Type: Conference Paper
Refereed: Yes
ISBN: 9781424492886
Subjects: Australian and New Zealand Standard Research Classification > CHEMICAL SCIENCE (030000) > ANALYTICAL CHEMISTRY (030100) > Sensor Technology (Chemical aspects) (030107)
Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanomaterials (100708)
Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanoscale Characterisation (100712)
Divisions: Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: © 2011 IEEE.
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Deposited On: 01 May 2013 22:17
Last Modified: 06 May 2013 17:06

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