A comparison of forward and reverse bias operation in a Pt/nanostructured ZnO Schottky diode based hydrogen sensor

Yu, J., Shafiei, M., Breedon, M., Kalantar-zadeh, K., & Wlodarski, W. (2009) A comparison of forward and reverse bias operation in a Pt/nanostructured ZnO Schottky diode based hydrogen sensor. Procedia Chemistry, 1(1), pp. 979-982.

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Abstract

A hydrogen gas sensor based on Pt/nanostructured ZnO Schottky diode has been developed. Our proposed theoretical model allows for the explanation of superior dynamic performance of the reverse biased diode when compared to the forward bias operation. The sensor was evaluated with low concentration H2 gas exposures over a temperature range of 280°C to 430°C. Upon exposure to H2 gas, the effective change in free carrier concentration at the Pt/structured ZnO interface is amplified by an enhancement factor, effectively lowering the reverse barrier, producing a large voltage shift. The lowering of the reverse barrier permits a faster response in reverse bias operation, than in forward bias operation.

Impact and interest:

7 citations in Scopus
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10 citations in Web of Science®

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ID Code: 59603
Item Type: Journal Article
Refereed: Yes
Keywords: Schottky, ZnO, hydrogen, nanostructured, reverse bias, forward bias, comparison
DOI: 10.1016/j.proche.2009.07.244
ISSN: 1876-6196
Subjects: Australian and New Zealand Standard Research Classification > CHEMICAL SCIENCE (030000) > ANALYTICAL CHEMISTRY (030100) > Sensor Technology (Chemical aspects) (030107)
Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanomaterials (100708)
Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanoscale Characterisation (100712)
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 02 May 2013 22:09
Last Modified: 12 Jul 2013 03:01

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