Reverse biased Schottky contact hydrogen sensors based on Pt∕nanostructured ZnO∕SiC
Shafiei, Mahnaz, Yu, Jerry, Arsat, Rashidah, Kalantar-zadeh, Kourosh, Comini, Elisabetta , Ferroni, Matteo, Sberveglieri, Giorgio , & Wlodarski, Wojtek (2009) Reverse biased Schottky contact hydrogen sensors based on Pt∕nanostructured ZnO∕SiC. In AIP Conference Proceedings, American Institute of Physics , Brescia, Italy, pp. 353-356.
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Pt/nanostructured ZnO/SiC Schottky contact devices were fabricated and characterized for hydrogen gas sensing. These devices were investigated in reverse bias due to greater sensitivity, which attributes to the application of nanostructured ZnO. The current-voltage (I-V) characteristics of these devices were measured in different hydrogen concentrations. Effective change in the barrier height for 1% hydrogen was calculated as 27.06 meV at 620°C. The dynamic response of the sensors was also investigated and a voltage shift of 325 mV was recorded at 620°C during exposure to 1% hydrogen in synthetic air.
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|Item Type:||Conference Paper|
|Keywords:||Gas Sensors, Hydrogen, ZnO, Schottky Diode, Reverse Bias|
|Subjects:||Australian and New Zealand Standard Research Classification > CHEMICAL SCIENCE (030000) > ANALYTICAL CHEMISTRY (030100) > Sensor Technology (Chemical aspects) (030107)
Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanomaterials (100708)
Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanoscale Characterisation (100712)
|Divisions:||Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
|Copyright Owner:||Copyright 2009 American Institute of Physics.|
|Deposited On:||02 May 2013 23:25|
|Last Modified:||12 Jul 2013 03:15|
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