Pt/ZnO/SiC thin film for hydrogen gas sensing

Yu, Jerry C.W., Shafiei, Mahnaz, Ling, Christopher, Wlodarski, Wojtek B., & Kalantar-Zadeh, Kourosh (2008) Pt/ZnO/SiC thin film for hydrogen gas sensing. In Al-Sarawi, Said Fares, Varadan, Vijay K., Weste, Neil, & Kalantar-Zadeh, Kourosh (Eds.) Smart Structures, Devices, and Systems IV, SPIE, Melbourne, VIC, 72680L-72680L.

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Zinc oxide (ZnO) is one of the most promising electronic and photonic materials to date. In this work, we present an enhanced ZnO Schottky gas sensor deposited on SiC substrates in comparison to those reported previously in literature. The performance of ZnO/SiC based Schottky thin film gas sensors produced a forward lateral voltage shift of 12.99mV and 111.87mV in response to concentrations of hydrogen gas at 0.06% and 1% in air at optimum temperature of 330 ºC. The maximum change in barrier height was calculated as 37.9 meV for 1% H2 sensing operation at the optimum temperature.

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ID Code: 59608
Item Type: Conference Paper
Refereed: Yes
Keywords: ZnO, Schottky, gas sensing, hydrogen, thin film
DOI: 10.1117/12.810586
ISBN: 9780819475206
ISSN: 0277786X
Subjects: Australian and New Zealand Standard Research Classification > CHEMICAL SCIENCE (030000) > ANALYTICAL CHEMISTRY (030100) > Sensor Technology (Chemical aspects) (030107)
Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanomaterials (100708)
Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanoscale Characterisation (100712)
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 02 May 2013 23:03
Last Modified: 12 Jul 2013 03:17

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