Pt/SnO2 nanowires/SiC based hydrogen gas sensor

Shafiei, M., Wlodarski, W., Kalantar-zadeh, K., Comini, E., Bianchi, S, & Sberveglieri, G. (2007) Pt/SnO2 nanowires/SiC based hydrogen gas sensor. In Mizaikoff, Boris (Ed.) Proceedings of the IEEE SENSORS 2007 Conference, IEEE, Atlanta, Georgia, USA , pp. 166-169.

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Abstract

Pt/SnO2 nanowires/SiC based metal-oxidesemiconductor (MOS) devices were fabricated and tested for their gas sensitivity towards hydrogen. Tin oxide (SnO2) nanowires were grown on SiC substrates by the vapour liquid solid growth process. The material properties of the SnO2 nanowires such as its formation and dimensions were analyzed using scanning electron microscopy (SEM). The currentvoltage (I-V) characteristics at different hydrogen concentrations are presented. The effective change in the barrier height for 0.06 and 1% hydrogen were found to be 20.78 and 131.59 meV, respectively. A voltage shift of 310 mV at 530°C for 1% hydrogen was measured.

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ID Code: 59629
Item Type: Conference Paper
Refereed: Yes
Subjects: Australian and New Zealand Standard Research Classification > CHEMICAL SCIENCE (030000) > ANALYTICAL CHEMISTRY (030100) > Sensor Technology (Chemical aspects) (030107)
Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanomaterials (100708)
Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanoscale Characterisation (100712)
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: © 2007 IEEE.
Copyright Statement: Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work
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Deposited On: 03 May 2013 01:20
Last Modified: 12 Jul 2013 13:13

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