Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates
Yu, J., Chen, G., Li, C.X., Shafiei, M., Ou, J.Z., Plessis, J.du, Kalantar-zadeh, K., Lai, P.T., & Wlodarski, W. (2011) Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates. Sensors and Actuators A: Physical, 172(1), pp. 9-14.
We developed Pt/tantalum oxide (Ta2O5) Schottky diodes for hydrogen sensing applications. Thin layer (4 nm) of Ta2O5 was deposited on silicon (Si) and silicon carbide (SiC) substrates using the radio frequency sputtering technique. We compared the performance of these sensors at different temperatures of 100 °C and 150 °C. At these operating temperatures, the sensor based on SiC exhibited a larger sensitivity, whilst the sensor based on Si exhibited a faster response toward hydrogen gas. We discussed herein, the experimental results obtained for these Pt/Ta2O5 based Schottky diodes exhibited that they are promising candidates for hydrogen sensing applications.
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|Item Type:||Journal Article|
|Keywords:||Tantalum oxide, RF sputtering, Schottky diode, Gas sensor, Hydrogen|
|Subjects:||Australian and New Zealand Standard Research Classification > CHEMICAL SCIENCE (030000) > ANALYTICAL CHEMISTRY (030100) > Sensor Technology (Chemical aspects) (030107)
Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanomaterials (100708)
Australian and New Zealand Standard Research Classification > TECHNOLOGY (100000) > NANOTECHNOLOGY (100700) > Nanoscale Characterisation (100712)
|Divisions:||Current > QUT Faculties and Divisions > Science & Engineering Faculty|
|Deposited On:||07 May 2013 23:24|
|Last Modified:||12 Jul 2013 01:42|
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