Field-effect transistors fabricated from diluted magnetic semiconductor colloidal nanowires
Li, Zhen, Du, Ai Jun, Sun, Qiao, Aljada, Muhsen, Zhu, Zhong Hua, & Lu, Gao Qing (Max) (2012) Field-effect transistors fabricated from diluted magnetic semiconductor colloidal nanowires. Nanoscale, 4(4), p. 1263.
Field-effect transistors (FETs) fabricated from undoped and Co2+-doped CdSe colloidal nanowires show typical n-channel transistor behaviour with gate effect. Exposed to microscope light, a 10 times current enhancement is observed in the doped nanowire-based devices due to the significant modification of the electronic structure of CdSe nanowires induced by Co2+-doping, which is revealed by theoretical calculations from spin-polarized plane-wave density functional theory.
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|Item Type:||Journal Article|
|Divisions:||Current > QUT Faculties and Divisions > Science & Engineering Faculty|
|Deposited On:||20 May 2013 22:58|
|Last Modified:||22 May 2013 04:24|
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