Field-effect transistors fabricated from diluted magnetic semiconductor colloidal nanowires

Li, Zhen, Du, Ai Jun, Sun, Qiao, Aljada, Muhsen, Zhu, Zhong Hua, & Lu, Gao Qing (Max) (2012) Field-effect transistors fabricated from diluted magnetic semiconductor colloidal nanowires. Nanoscale, 4(4), p. 1263.

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Field-effect transistors (FETs) fabricated from undoped and Co2+-doped CdSe colloidal nanowires show typical n-channel transistor behaviour with gate effect. Exposed to microscope light, a 10 times current enhancement is observed in the doped nanowire-based devices due to the significant modification of the electronic structure of CdSe nanowires induced by Co2+-doping, which is revealed by theoretical calculations from spin-polarized plane-wave density functional theory.

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11 citations in Web of Science®

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ID Code: 60120
Item Type: Journal Article
Refereed: Yes
DOI: 10.1039/c2nr11627h
ISSN: 2040-3372
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 20 May 2013 22:58
Last Modified: 22 May 2013 04:24

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