Field-effect transistors fabricated from diluted magnetic semiconductor colloidal nanowires

Li, Zhen, Du, Ai Jun, Sun, Qiao, Aljada, Muhsen, Zhu, Zhong Hua, & Lu, Gao Qing (Max) (2012) Field-effect transistors fabricated from diluted magnetic semiconductor colloidal nanowires. Nanoscale, 4(4), p. 1263.

View at publisher

Abstract

Field-effect transistors (FETs) fabricated from undoped and Co2+-doped CdSe colloidal nanowires show typical n-channel transistor behaviour with gate effect. Exposed to microscope light, a 10 times current enhancement is observed in the doped nanowire-based devices due to the significant modification of the electronic structure of CdSe nanowires induced by Co2+-doping, which is revealed by theoretical calculations from spin-polarized plane-wave density functional theory.

Impact and interest:

12 citations in Scopus
Search Google Scholar™
11 citations in Web of Science®

Citation counts are sourced monthly from Scopus and Web of Science® citation databases.

These databases contain citations from different subsets of available publications and different time periods and thus the citation count from each is usually different. Some works are not in either database and no count is displayed. Scopus includes citations from articles published in 1996 onwards, and Web of Science® generally from 1980 onwards.

Citations counts from the Google Scholar™ indexing service can be viewed at the linked Google Scholar™ search.

ID Code: 60120
Item Type: Journal Article
Refereed: Yes
DOI: 10.1039/c2nr11627h
ISSN: 2040-3372
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 20 May 2013 22:58
Last Modified: 22 May 2013 04:24

Export: EndNote | Dublin Core | BibTeX

Repository Staff Only: item control page