Evolution of epitaxial graphene layers on 3C SiC/Si (111) as a function of annealing temperature in UHV

Gupta, Bharati, Notarianni, Marco, Mishra, Niraj, Shafiei, Mahnaz, Iacopi, Francesca, & Motta, Nunzio (2014) Evolution of epitaxial graphene layers on 3C SiC/Si (111) as a function of annealing temperature in UHV. Carbon, 68, pp. 563-572.

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The growth of graphene on SiC/Si substrates is an appealing alternative to the growth on bulk SiC for cost reduction and to better integrate the material with Si based electronic devices. In this paper, we present a complete in-situ study of the growth of epitaxial graphene on 3C SiC (111)/Si (111) substrates via high temperature annealing (ranging from 1125˚C to 1375˚C) in ultra high vacuum (UHV). The quality and number of graphene layers have been thoroughly investigated by using x-ray photoelectron spectroscopy (XPS), while the surface characterization have been studied by scanning tunnelling microscopy (STM). Ex-situ Raman spectroscopy measurements confirm our findings, which demonstrate the exponential dependence of the number of graphene layer from the annealing temperature.

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ID Code: 63272
Item Type: Journal Article
Refereed: Yes
Keywords: Graphene, 3C SiC/Si (111), Scanning Tunnelling Microscope, X-ray Photoelectron Spectroscopy, Raman Spectroscopy, Ultra High Vaccuum
DOI: 10.1016/j.carbon.2013.11.035
ISSN: 0008-6223
Subjects: Australian and New Zealand Standard Research Classification > PHYSICAL SCIENCES (020000) > ATOMIC MOLECULAR NUCLEAR PARTICLE AND PLASMA PHYSICS (020200) > Atomic and Molecular Physics (020201)
Divisions: Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: Copyright 2013 Elsevier Ltd.
Copyright Statement: NOTICE: this is the author’s version of a work that was accepted for publication in Carbon. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Carbon, [Volume 68, (March 2014)] DOI: 10.1016/j.carbon.2013.11.035
Deposited On: 10 Oct 2013 23:43
Last Modified: 01 Apr 2016 16:16

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