Growth and properties of a multilayer system based on Y1Ba 2Cu3Ox and amorphous Y-ZrO2
Boikov, Yu, Ivanov, Z.G., Olsson, E., Alarco, J.A., Brorsson, G., & Claeson, T. (1992) Growth and properties of a multilayer system based on Y1Ba 2Cu3Ox and amorphous Y-ZrO2. Journal of Applied Physics, 72(1), pp. 199-202.
The growth of c-axis oriented Y1Ba2Cu 3Ox thin films on an amorphous buffer layer of Y-ZrO 2, deposited on sapphire substrates, was investigated. Both films were grown by a pulsed laser deposition technique. A strong correlation was observed between the properties of Y1Ba2Cu 3Ox and the thickness of the buffer layer. A Tc of 89 K was obtained for an optimal buffer layer thickness of 9 nm. A model that adequately describes the film growth process was developed. A multilayer system of Y1Ba2Cu3Ox and amorphous Y-ZrO2 was grown and a Tc of 87 K for the upper c-axis oriented layer was measured.
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|Item Type:||Journal Article|
|Additional Information:||Cited By (since 1996):4
Export Date: 5 November 2013
Language of Original Document: English
Correspondence Address: Boikov, Yu.; Department of Physics, Chalmers University of Technology, S-412 96 Gothenburg, Sweden
|Divisions:||Current > Institutes > Institute for Future Environments
Current > QUT Faculties and Divisions > Science & Engineering Faculty
|Deposited On:||07 Nov 2013 01:10|
|Last Modified:||07 Nov 2013 01:10|
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