YBa2Cu3O7-x films on yttria-stabilized ZrO2 substrates : influence of the substrate morphology
Brorsson, G., Olsson, E., Ivanov, Z.G., Stepantsov, E.A., Alarco, J.A., Boikov, Yu, Claeson, T., Berastegui, P., Langer, V., & Löfgren, M. (1994) YBa2Cu3O7-x films on yttria-stabilized ZrO2 substrates : influence of the substrate morphology. Journal of Applied Physics, 75(12), pp. 7958-7965.
c-axis-oriented YBa2Cu3O7-x (YBCO) thin films were laser deposited on (001) yttria-stabilized ZrO2 (YSZ) substrates with different surface morphologies. The in-plane orientation of the films on smooth substrates was sensitive to the deposition conditions, often resulting in mixed orientations. However, a strongly dominating  YBCO//YSZ orientation was obtained at a deposition temperature of 770°C. Films on substrates with surface steps, induced by depositing a homoepitaxial buffer layer or by thermally annealing the substrate, had a YBCO//YSZ orientation when deposited at the same temperature. It was concluded that the YBCO// YSZ orientation was promoted by a graphoepitaxial mechanism. Films prepared under identical conditions on smooth and stepped substrates grew with extended c axes on the former. It is proposed that the extension can be induced by disorder, invoked by a low oxygen pressure and a low density of adsorption sites. The disorder may be eliminated by either an increase of the oxygen pressure or an increase of the density of adsorption sites in the form of steps. The film microstructure influenced the microwave surface resistance, which was similar for films with one exclusive in-plane orientation and higher for films with mixed orientations. The films on the stepped surfaces had superior superconducting properties; inductive measurements gave a Tc onset of 88 K, a ΔT(90%-10%) c of 0.2 K, and the transport jc was 1.5×106 A/cm2 at 83 K, for films on substrates with homoepitaxial buffer layers.
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|Item Type:||Journal Article|
|Additional Information:||Cited By (since 1996):13
Export Date: 5 November 2013
Language of Original Document: English
Correspondence Address: Brorsson, G.; Department of Physics, Chalmers University of Technology, S-412 96 Göteborg, Sweden
|Divisions:||Current > Institutes > Institute for Future Environments
Current > QUT Faculties and Divisions > Science & Engineering Faculty
|Deposited On:||07 Nov 2013 01:13|
|Last Modified:||07 Nov 2013 01:13|
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