Investigations of the physical origins of etching LiNbO3 during Ti in-diffusion
Sivan, Vijay, Holland, Anthony, O'Mullane, Anthony P., & Mitchell, Arnan (2010) Investigations of the physical origins of etching LiNbO3 during Ti in-diffusion. Applied Physics Letters, 96(12), p. 121913.
We investigate the physical origins of etching observed during Ti diffusion. The relationship between observed etch depth and water vapor content in the annealing environment is quantified. The dynamics of the etching process are also identified. It is discovered that water vapor content is essential for etching and that there is a characteristic delay before etching is observed. From these observations we can conclude that the process is electrochemical in nature with ionic defects diffusing into the Ti strip from the lithium niobate and these defects catalyzing the dissociation of water into reactive ions.
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|Item Type:||Journal Article|
|Divisions:||Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
|Copyright Owner:||American Institute of Physics|
|Deposited On:||18 Nov 2013 04:45|
|Last Modified:||22 Aug 2014 00:49|
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