QUT ePrints

Ge–Si intermixing in Ge nanostructures on Si(111): an XAFS versus STM study

Motta, Nunzio, Boscherini, Federico, Sgarlata, Anna , Balzarotti, Adalberto , Ratto, Fulvio, & Rosei, Federico (2007) Ge–Si intermixing in Ge nanostructures on Si(111): an XAFS versus STM study. Physical Review B (Condensed Matter and Materials Physics), 75, pp. 1-9.

View at publisher

Abstract

We report a detailed investigation of interdiffusion processes that occur during the growth of Germanium nanostructures on the (111)–oriented surface of Silicon. In particular, X–Ray Absorption Fine Structure (XAFS) measurements performed ex situ show that a Ge1-xSix alloy forms during deposition, with average composition x varying between 0.25 and 0.50, depending on substrate temperature and total coverage. By fitting the Ge nearest neighbor numbers around Si as a function of the deposited thickness with a simple model, the effective vertical composition profile in the growth direction has been estimated. The latter has been described with a static effective diffusion length of (10.0±1.5) nm at 530 degrees Celsius and (5±1) nm at 450 degrees Celsius, which is interpreted as the dominance of surface transport processes in the intermixing dynamics. The analysis of the data on Ge-Ge bond length indicates a decrease of the Ge–Ge atomic distances with increasing Ge fraction, confirming previous theoretical predictions for strained epilayers. The XAFS results are compared to morphological information obtained by Scanning Tunneling Microscopy investigations carried out in situ, yielding a satisfactory description for the epitaxy of this system.

Impact and interest:

11 citations in Scopus
Search Google Scholar™
11 citations in Web of Science®

Citation countsare sourced monthly from Scopus and Web of Science® citation databases.

These databases contain citations from different subsets of available publications and different time periods and thus the citation count from each is usually different. Some works are not in either database and no count is displayed. Scopus includes citations from articles published in 1996 onwards, and Web of Science® generally from 1980 onwards.

Citations counts from the Google Scholar™ indexing service can be viewed at the linked Google Scholar™ search.

Full-text downloads:

225 since deposited on 16 Mar 2007
49 in the past twelve months

Full-text downloadsdisplays the total number of times this work’s files (e.g., a PDF) have been downloaded from QUT ePrints as well as the number of downloads in the previous 365 days. The count includes downloads for all files if a work has more than one.

ID Code: 6527
Item Type: Journal Article
Keywords: Ge, Si, Epitaxy, Intermixing, XAFS, STM
DOI: 10.1103/PhysRevB.75.035337
ISSN: 1550-235x
Subjects: Australian and New Zealand Standard Research Classification > PHYSICAL SCIENCES (020000) > CONDENSED MATTER PHYSICS (020400) > Surfaces and Structural Properties of Condensed Matter (020406)
Divisions: Past > QUT Faculties & Divisions > Faculty of Built Environment and Engineering
Copyright Owner: Copyright 2007 American Physical Society
Copyright Statement: Reproduced in accordance with the copyright policy of the publisher.
Deposited On: 16 Mar 2007
Last Modified: 29 Feb 2012 23:40

Export: EndNote | Dublin Core | BibTeX

Repository Staff Only: item control page