Size- and orientation-selective Si nanowire growth : thermokinetic effects of naeoscale plasma chemistry
Mehdipour, Hamid & Ostrikov, Kostya (2013) Size- and orientation-selective Si nanowire growth : thermokinetic effects of naeoscale plasma chemistry. Journal of the American Chemical Society, 135(5), pp. 1912-1918.
A multiscale, multiphase thermokinetic model is used to show the effective control of the growth orientation of thin Si NWs for nanoelectronic devices enabled by nanoscale plasma chemistry. It is shown that very thin Si NWs with  growth direction can nucleate at much lower process temperatures and pressures compared to thermal chemical vapor deposition where -directed Si NWs are predominantly grown. These findings explain a host of experimental results and offer the possibility of energy- and matter-efficient, size- and orientation-controlled growth of  Si NWs for next-generation nanodevices.
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|Item Type:||Journal Article|
|Divisions:||Current > QUT Faculties and Divisions > Science & Engineering Faculty|
|Deposited On:||09 Jul 2014 01:28|
|Last Modified:||10 Jul 2014 02:19|
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