Size- and orientation-selective Si nanowire growth : thermokinetic effects of naeoscale plasma chemistry

Mehdipour, Hamid & Ostrikov, Kostya (2013) Size- and orientation-selective Si nanowire growth : thermokinetic effects of naeoscale plasma chemistry. Journal of the American Chemical Society, 135(5), pp. 1912-1918.

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Abstract

A multiscale, multiphase thermokinetic model is used to show the effective control of the growth orientation of thin Si NWs for nanoelectronic devices enabled by nanoscale plasma chemistry. It is shown that very thin Si NWs with [110] growth direction can nucleate at much lower process temperatures and pressures compared to thermal chemical vapor deposition where [111]-directed Si NWs are predominantly grown. These findings explain a host of experimental results and offer the possibility of energy- and matter-efficient, size- and orientation-controlled growth of [110] Si NWs for next-generation nanodevices.

Impact and interest:

7 citations in Scopus
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7 citations in Web of Science®

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ID Code: 73579
Item Type: Journal Article
Refereed: Yes
DOI: 10.1021/ja3110279
ISSN: 1520-5126
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 09 Jul 2014 01:28
Last Modified: 10 Jul 2014 02:19

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