Gold nanoresistors with near-constant resistivity in the cryogenic-to-room temperature range

Yajadda, M. M. A., Levchenko, I., & Ostrikov, K. (2011) Gold nanoresistors with near-constant resistivity in the cryogenic-to-room temperature range. Journal of Applied Physics, 110(2), 023303.

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Abstract

Using a multiple plasma deposition-annealing (MDA) technique, we have fabricated an Au nanoisland-based thin film nanoresistor with a very low temperature coefficient of electrical resistivity in a cryogenic-to-room temperature range of 10 to 300 K. The nanoislanded gold film was deposited on a SiO2/Si wafer (500 nm SiO2 thickness) between two 300 nm thick Au electrodes which were separated by 100 m. A sophisticated selection of the thickness of the nanoislanded gold film, the annealing temperature, as well as the number of deposition/annealing cycles resulted in the fabrication of a nanoresistor with a temperature coefficient of electrical resistivity of 2.1 × 10-3 K-1 and the resistivity deviation not exceeding 2% in a cryogenic-to-room temperature range. We have found that the constant resistivity regime of the nanoisland-based thin film nanoresistor corresponds to a minimized nanoisland activation energy (approximately 0.3 meV). This energy can be minimized by reducing the nearest neighbor distance and increasing the size of the Au nanoislands in the optimized nanoresistor structure. It is shown that the constant resistivity nanoresistor operates in the regime where the thermally activated electron tunneling is compensated by the negative temperature dependence of the metallic-type conductivity of nanoislands. Our results are relevant to the development of commercially viable methods of nanoresistor production for various nanoelectronics-based devices. The proposed MDA technique also provides the opportunity to fabricate large arrays of metallic nanoparticles with controllable size, shapes and inter-nanoparticle gaps.

Impact and interest:

7 citations in Scopus
7 citations in Web of Science®
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ID Code: 73682
Item Type: Journal Article
Refereed: Yes
DOI: 10.1063/1.3610497
ISSN: 0021-8979
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 10 Jul 2014 04:24
Last Modified: 21 Jun 2017 22:01

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