Rapid, simultaneous activation of thin nanowire growth in low-temperature, low-pressure chemically active plasmas

Ostrikov, Kostya & Mehdipour, Hamid (2011) Rapid, simultaneous activation of thin nanowire growth in low-temperature, low-pressure chemically active plasmas. Journal of Materials Chemistry, 21(22), pp. 8183-8191.

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Multiscale numerical modeling of the species balance and transport in the ionized gas phase and on the nanostructured solid surface complemented by the heat exchange model is used to demonstrate the possibility of minimizing the Gibbs-Thompson effect in low-temperature, low-pressure chemically active plasma-assisted growth of uniform arrays of very thin Si nanowires, impossible otherwise. It is shown that plasma-specific effects drastically shorten and decrease the dispersion of the incubation times for the nucleation of nanowires on non-uniform Au catalyst nanoparticle arrays. The fast nucleation makes it possible to avoid a common problem of small catalyst nanoparticle burying by amorphous silicon. These results explain a multitude of experimental observations on chemically active plasma-assisted Si nanowire growth and can be used for the synthesis of a range of inorganic nanowires for environmental, biomedical, energy conversion, and optoelectronic applications.

Impact and interest:

12 citations in Scopus
12 citations in Web of Science®
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55 since deposited on 10 Jul 2014
21 in the past twelve months

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ID Code: 73714
Item Type: Journal Article
Refereed: Yes
DOI: 10.1039/c1jm10318k
ISSN: 1364-5501
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 10 Jul 2014 02:07
Last Modified: 10 Jul 2014 02:07

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