Minimizing the Gibbs–Thomson effect in the low-temperature plasma synthesis of thin Si nanowires
Mehdipour, H., Ostrikov, K., Rider, A.E., & Furman, S.A. (2011) Minimizing the Gibbs–Thomson effect in the low-temperature plasma synthesis of thin Si nanowires. Nanotechnology, 22(31), p. 315707.
An advanced combination of numerical models, including plasma sheath, ion- and radical-induced species creation and plasma heating effects on the surface and within a Au catalyst nanoparticle, is used to describe the catalyzed growth of Si nanowires in the sheath of a low-temperature and low-pressure plasma. These models have been used to explain the higher nanowire growth rates, low-energy barriers, much thinner Si nanowire nucleation and the less effective Gibbs–Thomson effect in reactive plasma processes, compared with those of neutral gas thermal processes. The effects of variation in the plasma sheath parameters and substrate potential on Si nanowire nucleation and growth have also been investigated. It is shown that increasing the plasma-related effects leads to decreases in the nucleation energy barrier and the critical nanoparticle radius, with the Gibbs–Thomson effect diminished, even at low temperatures. The results obtained are consistent with available experimental results and open a path toward the energy- and matter-efficient nucleation and growth of a broad range of one-dimensional quantum structures.
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|Item Type:||Journal Article|
|Divisions:||Current > QUT Faculties and Divisions > Science & Engineering Faculty|
|Deposited On:||10 Jul 2014 03:30|
|Last Modified:||11 Jul 2014 01:34|
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