Deterministic plasma-aided synthesis of high-quality nanoislanded nc-SiC films

Cheng, Qijin, Xu, S., Long, Jidong, & Ostrikov, K. (2007) Deterministic plasma-aided synthesis of high-quality nanoislanded nc-SiC films. Applied Physics Letters, 90(17), pp. 173112-1.

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Despite major advances in the fabrication and characterization of SiC and related materials, there has been no convincing evidence of the synthesis of nanodevice-quality nanoislanded SiC films at low, ultralarge scale integration technology-compatible process temperatures. The authors report on a low-temperature (400 °C) plasma-assisted rf magnetron sputtering deposition of high-quality nanocrystalline SiC films made of uniform-size nanoislands that almost completely cover the Si(100) surface. These nanoislands are chemically pure, highly stoichiometric, have a typical size of 20-35 nm, and contain small (∼5 nm) nanocrystalline inclusions. The properties of nanocrystalline SiC films can be effectively controlled by the plasma parameters.

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ID Code: 73756
Item Type: Journal Article
Refereed: Yes
Additional URLs:
Keywords: silicon, thin films, sputter deposition, nanofabrication, carbides
DOI: 10.1063/1.2731728
ISSN: 0003-6951
Divisions: Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: Copyright 2007 American Institute of Physics (AIP)
Deposited On: 11 Jul 2014 01:06
Last Modified: 14 Jul 2014 03:36

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