Deterministic plasma-aided synthesis of high-quality nanoislanded nc-SiC films
Cheng, Qijin, Xu, S., Long, Jidong, & Ostrikov, K. (2007) Deterministic plasma-aided synthesis of high-quality nanoislanded nc-SiC films. Applied Physics Letters, 90(17), pp. 173112-1.
Despite major advances in the fabrication and characterization of SiC and related materials, there has been no convincing evidence of the synthesis of nanodevice-quality nanoislanded SiC films at low, ultralarge scale integration technology-compatible process temperatures. The authors report on a low-temperature (400 °C) plasma-assisted rf magnetron sputtering deposition of high-quality nanocrystalline SiC films made of uniform-size nanoislands that almost completely cover the Si(100) surface. These nanoislands are chemically pure, highly stoichiometric, have a typical size of 20-35 nm, and contain small (∼5 nm) nanocrystalline inclusions. The properties of nanocrystalline SiC films can be effectively controlled by the plasma parameters.
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|Item Type:||Journal Article|
|Keywords:||silicon, thin films, sputter deposition, nanofabrication, carbides|
|Divisions:||Current > Schools > School of Chemistry, Physics & Mechanical Engineering
Current > QUT Faculties and Divisions > Science & Engineering Faculty
|Copyright Owner:||Copyright 2007 American Institute of Physics (AIP)|
|Deposited On:||11 Jul 2014 01:06|
|Last Modified:||14 Jul 2014 03:36|
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