Plasma-enabled growth of separated, vertically aligned copper-capped carbon nanocones on silicon

Kumar, S., Levchenko, I., Keidar, M., & Ostrikov, K. (2010) Plasma-enabled growth of separated, vertically aligned copper-capped carbon nanocones on silicon. Applied Physics Letters, 97(15), pp. 151503-1.

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The formation of vertically aligned, clearly separated, copper-capped carbon nanocones with a length of up to 500 nm and base diameter of about 150 nm via three-stage process involving magnetron sputtering, N2 plasma treatment, and CH4 + N2 plasma growth is studied. The width of gaps between the nanocones can be controlled by the gas composition. The nanocone formation mechanism is explained in terms of strong passivation of carbon in narrow gaps, where the access of plasma ions is hindered and the formation of large Cn H2n+2 molecules is possible. This plasma-enabled approach can be used to fabricate nanoelectronic, nanofluidic, and optoelectronic components and devices. © 2010 American Institute of Physics.

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15 citations in Scopus
15 citations in Web of Science®
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ID Code: 73764
Item Type: Journal Article
Refereed: Yes
Additional URLs:
Keywords: Nanostructures, Carbon, Copper
DOI: 10.1063/1.3502562
ISSN: 0003-6951
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 11 Jul 2014 02:28
Last Modified: 21 Jun 2017 22:02

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