Kinetics of the initial stage of silicon surface oxidation : Deal–Grove or surface nucleation?
Levchenko, I., Cvelbar, U., & Ostrikov, K. (2009) Kinetics of the initial stage of silicon surface oxidation : Deal–Grove or surface nucleation? Applied Physics Letters, 95(2), 021502-1.
The nucleation-initiated oxidation of a Si surface at very low temperatures in plasmas is demonstrated experimentally, in contrast to the Deal-Grove mechanism, which predicts Si oxidation at a Si/SiO interface and cannot adequately describe the formation of SiO nanodots and oxidation rates at very low (several nanometers) oxide thickness. Based on the experimental results, an alternative oxidation scenario is proposed and supported by multiscale numerical simulations suggesting that saturation of micro- and nanohillocks with oxygen is a trigger mechanism for initiation of Si surface oxidation. This approach is generic and can be applied to describe the kinetics of low-temperature oxidation of other materials. © 2009 American Institute of Physics.
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|Item Type:||Journal Article|
|Keywords:||Surface oxidation, Plasma materials processing, Nucleation|
|Divisions:||Current > QUT Faculties and Divisions > Science & Engineering Faculty|
|Copyright Owner:||Copyright 2009 American Institute of Physics.|
|Deposited On:||11 Jul 2014 02:21|
|Last Modified:||22 Aug 2014 01:09|
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