Self-organized vertically aligned single-crystal silicon nanostructures with controlled shape and aspect ratio by reactive plasma etching

Xu, S., Levchenko, I., Huang, S.Y., & Ostrikov, K. (2009) Self-organized vertically aligned single-crystal silicon nanostructures with controlled shape and aspect ratio by reactive plasma etching. Applied Physics Letters, 95(11), pp. 111505-1.

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Abstract

The formation of vertically aligned single-crystalline silicon nanostructures via "self-organized" maskless etching in Ar+ H 2 plasmas is studied. The shape and aspect ratio can be effectively controlled by the reactive plasma composition. In the optimum parameter space, single-crystalline pyramid-like nanostructures are produced; otherwise, nanocones and nanodots are formed. This generic nanostructure formation approach does not involve any external material deposition. It is based on a concurrent sputtering, etching, hydrogen termination, and atom/radical redeposition and can be applied to other nanomaterials.

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58 citations in Scopus
57 citations in Web of Science®
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ID Code: 73776
Item Type: Journal Article
Refereed: Yes
Additional URLs:
DOI: 10.1063/1.3232210
ISSN: 0003-6951
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: Copyright 2009 American Institute of Physics
Deposited On: 10 Jul 2014 22:48
Last Modified: 21 Jun 2017 23:01

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