Controlled-bandgap silicon nitride nanomaterials : deterministic nitrogenation in high-density plasmas
Cheng, Q., Xu, S., & Ostrikov, K. (2010) Controlled-bandgap silicon nitride nanomaterials : deterministic nitrogenation in high-density plasmas. Journal of Materials Chemistry, 20(28), pp. 5853-5859.
To overcome major problems associated with insufficient incorporation of nitrogen in hydrogenated amorphous silicon nitride (a-SiNx:H) nanomaterials, which in turn impedes the development of controlled-bandgap nanodevices, here we demonstrate the possibility to achieve effective bandgap control in a broad range by using high-density inductively coupled plasmas. This achievement is related to the outstanding dissociation ability of such plasmas. It is shown that the compositional, structural, optical, and morphological properties of the synthesized a-SiNx:H nanomaterials can be effectively tailored through the manipulation of the flow rate ratio of the silane to nitrogen gases X. In particular, a wide bandgap of 5.21 eV can be uniquely achieved at a low flow rate ratio of the nitrogen to silane gas of 1.0, whereas typically used values often exceed 20.0. These results are highly-relevant to the development of the next-generation nanodevices that rely on the effective control of the functional nano-layer bandgap energies.
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|Item Type:||Journal Article|
|Divisions:||Current > QUT Faculties and Divisions > Science & Engineering Faculty|
|Copyright Owner:||Copyright 2010 Royal Society of Chemistry|
|Deposited On:||11 Jul 2014 03:24|
|Last Modified:||14 Jul 2014 01:24|
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