Inductively coupled plasma-assisted RF magnetron sputtering deposition of boron-doped microcrystalline Si films

Huang, S.Y., Cheng, Q.J., Xu, S., & Ostrikov, K. (2010) Inductively coupled plasma-assisted RF magnetron sputtering deposition of boron-doped microcrystalline Si films. Journal of Alloys and Compounds, 499(2), pp. 166-170.

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Abstract

An innovative custom-designed inductively coupled plasma-assisted RF magnetron sputtering deposition system has been developed to synthesize B-doped microcrystalline silicon thin films using a pure boron sputtering target in a reactive silane and argon gas mixture. Films were deposited using different boron target powers ranging from 0 to 350 W at a substrate temperature of 250 °C. The effect of the boron target power on the structural and electrical properties of the synthesized films was extensively investigated using X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and Hall-effect system. It is shown that, with an initial increase of the boron target power from 0 to 300 W, the structural and electrical properties of the B-doped microcrystalline films are improved. However, when the target power is increased too much (e.g. to 350 W), these properties become slightly worse. The variation of the structural and electrical properties of the synthesized B-doped microcrystalline thin films is related to the incorporation of boron atoms during the crystallization and doping of silicon in the inductively coupled plasma-based process. This work is particularly relevant to the microcrystalline silicon-based p-i-n junction solar cells.

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4 citations in Web of Science®

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ID Code: 73785
Item Type: Journal Article
Refereed: Yes
Additional URLs:
Keywords: Boron doping, Inductively coupled plasmas, Microcrystalline silicon, Solar cells
DOI: 10.1016/j.jallcom.2010.01.078
ISSN: 0925-8388
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 11 Jul 2014 03:39
Last Modified: 14 Jul 2014 01:02

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