Increased size selectivity of Si quantum dots on SiC at low substrate temperatures : an ion-assisted self-organization approach

Seo, D.H., Rider, A.E., Das Arulsamy, A., Levchenko, I., & Ostrikov, K. (2010) Increased size selectivity of Si quantum dots on SiC at low substrate temperatures : an ion-assisted self-organization approach. Journal of Applied Physics, 107(2), 024313-1.

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A simple, effective, and innovative approach based on ion-assisted self-organization is proposed to synthesize size-selected Si quantum dots (QDs) on SiC substrates at low substrate temperatures. Using hybrid numerical simulations, the formation of Si QDs through a self-organization approach is investigated by taking into account two distinct cases of Si QD formation using the ionization energy approximation theory, which considers ionized in-fluxes containing Si3+ and Si1+ ions in the presence of a microscopic nonuniform electric field induced by a variable surface bias. The results show that the highest percentage of the surface coverage by 1 and 2 nm size-selected QDs was achieved using a bias of -20 V and ions in the lowest charge state, namely, Si1+ ions in a low substrate temperature range (227-327 °C). As low substrate temperatures (≤500 °C) are desirable from a technological point of view, because (i) low-temperature deposition techniques are compatible with current thin-film Si-based solar cell fabrication and (ii) high processing temperatures can frequently cause damage to other components in electronic devices and destroy the tandem structure of Si QD-based third-generation solar cells, our results are highly relevant to the development of the third-generation all-Si tandem photovoltaic solar cells.

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ID Code: 73793
Item Type: Journal Article
Refereed: Yes
Additional URLs:
DOI: 10.1063/1.3284941
ISSN: 0021-8979
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Copyright Owner: Copyright 2010 American Institute of Physics
Deposited On: 11 Jul 2014 01:26
Last Modified: 17 Jul 2014 09:22

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