Inductively coupled plasma-assisted RF magnetron sputtering deposition of highly uniform SiC nanoislanded films
Cheng, Q., Xu, S., Huang, S., Long, J., Ren, Y., Xu, M., & Ostrikov, K. (2008) Inductively coupled plasma-assisted RF magnetron sputtering deposition of highly uniform SiC nanoislanded films. IEEE Transactions on Plasma Science, 36(4), pp. 870-871.
A new deposition technique-inductively coupled plasma-assisted RF magnetron sputtering has been developed to fabricate SiC nanoislanded films. In this system, the plasma production and magnetron sputtering can be controlled independently during the discharge. The deposited SiC nanoislanded films are highly uniform, have excellent stoichiometry, have a typical size of 10-45 nm, and contain small (∼ 6 nm) cubic SiC nanocrystallites embedded in an amorphous SiC matrix.
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|Item Type:||Journal Article|
|Keywords:||Amorphous magnetic materials, Films, Inductively coupled plasma (ICP), Magnetron sputtering, Nanoislanded SiC, Plasmas, Radio frequency, Silicon carbide, Sputtering, Substrates|
|Divisions:||Current > QUT Faculties and Divisions > Science & Engineering Faculty|
|Deposited On:||14 Jul 2014 01:51|
|Last Modified:||15 Jul 2014 01:01|
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