The path to stoichiometric composition of III–V binary quantum dots through plasma/ion-assisted self-assembly

Rider, A.E. & Ostrikov, K. (2009) The path to stoichiometric composition of III–V binary quantum dots through plasma/ion-assisted self-assembly. Surface Science, 603(2), pp. 359-368.

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Semiconductor III-V quantum dots (QDs) are particularly enticing components for the integration of optically promising III-V materials with the silicon technology prevalent in the microelectronics industry. However, defects due to deviations from a stoichiometric composition [group III: group V = 1] may lead to impaired device performance. This paper investigates the initial stages of formation of InSb and GaAs QDs on Si(1 0 0) through hybrid numerical simulations. Three situations are considered: a neutral gas environment (NG), and two ionized gas environments, namely a localized ion source (LIS) and a background plasma (BP) case. It is shown that when the growth is conducted in an ionized gas environment, a stoichiometric composition may be obtained earlier in the QD as compared to a NG. Moreover, the stoichiometrization time, tst, is shorter for the BP case compared to the LIS scenario. A discussion of the effect of ion/plasma-based tools as well as a range of process conditions on the final island size distribution is also included. Our results suggest a way to obtain a deterministic level of control over nanostructure properties (in particular, elemental composition and size) during the initial stages of growth which is a crucial step towards achieving highly tailored QDs suitable for implementation in advanced technological devices.

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6 citations in Web of Science®

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ID Code: 73839
Item Type: Journal Article
Refereed: Yes
Additional URLs:
Keywords: Computer simulation, III-V Semiconductors, Plasma, Quantum dots, Self-assembly, Stoichiometry, Surface diffusion
DOI: 10.1016/j.susc.2008.11.030
ISSN: 0039-6028
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 14 Jul 2014 01:32
Last Modified: 15 Jul 2014 00:17

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