Visible photoluminescence from plasma-synthesized SiO 2-buffered SiN x films : effect of film thickness and annealing temperature

Xu, M., Xu, S., Chai, J.W., Long, J.D., Cheng, Q.J., Ee, Y.C., & Ostrikov, K. (2008) Visible photoluminescence from plasma-synthesized SiO 2-buffered SiN x films : effect of film thickness and annealing temperature. Journal of Applied Physics, 103(5), 053512-1.

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The effect of the film thickness and postannealing temperature on visible photoluminescence (PL) from Si Nx films synthesized by plasma-assisted radio frequency magnetron sputtering on Si O2 buffer layers is investigated. It is shown that strong visible PL is achieved at annealing temperatures above 650 °C. The optimum annealing temperature for the maximum PL yield strongly depends on the film thickness and varies from 800 to 1200°C. A comparative composition-structure-property analysis reveals that the PL intensity is directly related to the content of the Si-O and Si-N bonds in the Si Nx films. Therefore, sufficient oxidation and moderate nitridation of Si Nx Si O2 films during the plasma-based growth process are crucial for a strong PL yield. Excessively high annealing temperatures lead to weakened Si-N bonds in thinner Si Nx films, which eventually results in a lower PL intensity.

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6 citations in Scopus
6 citations in Web of Science®
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ID Code: 73889
Item Type: Journal Article
Refereed: Yes
Additional URLs:
DOI: 10.1063/1.2884531
ISSN: 0021-8979
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 14 Jul 2014 02:07
Last Modified: 22 Jun 2017 00:01

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