p-type doping of ZnO by means of high-density inductively coupled plasmas

Huang, S.Y., Xu, S., Chai, J.W., Cheng, Q.J., Long, J.D., & Ostrikov, K. (2009) p-type doping of ZnO by means of high-density inductively coupled plasmas. Materials Letters, 63(12), pp. 972-974.

View at publisher


A custom-designed inductively coupled plasma assisted radio-frequency magnetron sputtering deposition system has been used to fabricate N-doped p-type ZnO (ZnO:N) thin films on glass substrates from a sintered ZnO target in a reactive Ar + N2 gas mixture. X-ray diffraction and scanning electron microscopy analyses show that the ZnO:N films feature a hexagonal crystal structure with a preferential (002) crystallographic orientation and grow as vertical columnar structures. Hall effect and X-ray photoelectron spectroscopy analyses show that N-doped ZnO thin films are p-type with a hole concentration of 3.32 × 1018 cm- 3 and mobility of 1.31 cm2 V- 1 s- 1. The current-voltage measurement of the two-layer structured ZnO p-n homojunction clearly reveals the rectifying ability of the p-n junction. The achievement of p-type ZnO:N thin films is attributed to the high dissociation ability of the high-density inductively coupled plasma source and effective plasma-surface interactions during the growth process.

Impact and interest:

16 citations in Scopus
15 citations in Web of Science®
Search Google Scholar™

Citation counts are sourced monthly from Scopus and Web of Science® citation databases.

These databases contain citations from different subsets of available publications and different time periods and thus the citation count from each is usually different. Some works are not in either database and no count is displayed. Scopus includes citations from articles published in 1996 onwards, and Web of Science® generally from 1980 onwards.

Citations counts from the Google Scholar™ indexing service can be viewed at the linked Google Scholar™ search.

ID Code: 73899
Item Type: Journal Article
Refereed: Yes
Additional URLs:
Keywords: Chemical vapor deposition, Microstructure, Nanomaterials, Semiconductors
DOI: 10.1016/j.matlet.2009.01.047
ISSN: 0167-577X
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 15 Jul 2014 00:03
Last Modified: 22 Jun 2017 00:01

Export: EndNote | Dublin Core | BibTeX

Repository Staff Only: item control page