p-type doping of ZnO by means of high-density inductively coupled plasmas
Huang, S.Y., Xu, S., Chai, J.W., Cheng, Q.J., Long, J.D., & Ostrikov, K. (2009) p-type doping of ZnO by means of high-density inductively coupled plasmas. Materials Letters, 63(12), pp. 972-974.
A custom-designed inductively coupled plasma assisted radio-frequency magnetron sputtering deposition system has been used to fabricate N-doped p-type ZnO (ZnO:N) thin films on glass substrates from a sintered ZnO target in a reactive Ar + N2 gas mixture. X-ray diffraction and scanning electron microscopy analyses show that the ZnO:N films feature a hexagonal crystal structure with a preferential (002) crystallographic orientation and grow as vertical columnar structures. Hall effect and X-ray photoelectron spectroscopy analyses show that N-doped ZnO thin films are p-type with a hole concentration of 3.32 × 1018 cm- 3 and mobility of 1.31 cm2 V- 1 s- 1. The current-voltage measurement of the two-layer structured ZnO p-n homojunction clearly reveals the rectifying ability of the p-n junction. The achievement of p-type ZnO:N thin films is attributed to the high dissociation ability of the high-density inductively coupled plasma source and effective plasma-surface interactions during the growth process.
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|Item Type:||Journal Article|
|Keywords:||Chemical vapor deposition, Microstructure, Nanomaterials, Semiconductors|
|Divisions:||Current > QUT Faculties and Divisions > Science & Engineering Faculty|
|Deposited On:||15 Jul 2014 00:03|
|Last Modified:||16 Jul 2014 01:37|
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