Aluminum-assisted crystallization and p-type doping of polycrystalline Si

Huang, S.Y., Xu, S., Cheng, Q.J., Long, J.D., & Ostrikov, K. (2009) Aluminum-assisted crystallization and p-type doping of polycrystalline Si. Applied Physics A, 97(2), pp. 375-380.

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Aluminum-doped p-type polycrystalline silicon thin films have been synthesized on glass substrates using an aluminum target in a reactive SiH 4+Ar+H2 gas mixture at a low substrate temperature of 300∈°C through inductively coupled plasma-assisted RF magnetron sputtering. In this process, it is possible to simultaneously co-deposit Si-Al in one layer for crystallization of amorphous silicon, in contrast to the conventional techniques where alternating metal and amorphous Si layers are deposited. The effect of aluminum target power on the structural and electrical properties of polycrystalline Si films is analyzed by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and Hall-effect analysis. It is shown that at an aluminum target power of 100 W, the polycrystalline Si film features a high crystalline fraction of 91%, a vertically aligned columnar structure, a sheet resistance of 20.2 kΩ/□ and a hole concentration of 6.3×1018 cm-3. The underlying mechanism for achieving the semiconductor-quality polycrystalline silicon thin films at a low substrate temperature of 300∈°C is proposed.

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ID Code: 73900
Item Type: Journal Article
Refereed: Yes
Additional URLs:
DOI: 10.1007/s00339-009-5220-4
ISSN: 0947-8396
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 14 Jul 2014 05:46
Last Modified: 14 Jul 2014 22:48

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