Effective control of nanostructured phases in rapid, room-temperature synthesis of nanocrystalline Si in high-density plasmas

Cheng, Qijin, Xu, Shuyan, Huang, Shiyong, & Ostrikov, Kostya (2009) Effective control of nanostructured phases in rapid, room-temperature synthesis of nanocrystalline Si in high-density plasmas. Crystal Growth and Design, 9(6), pp. 2863-2867.

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An innovative and effective approach based on low-pressure, low-frequency, thermally nonequilibrium, high-density inductively coupled plasmas is proposed to synthesize device-quality nanocrystalline silicon (nc-Si) thin films at room temperature and with very competitive growth rates. The crystallinity and microstructure properties (including crystal structure, crystal volume fraction, surface morphology, etc.) of this nanostructured phase of Si can be effectively tailored in broad ranges for different device applications by simply varying the inductive rf power density from 25.0 to 41.7 mW/cm3. In particular, at a moderate rf power density of 41.7 mW/cm3, the nc-Si films feature a very high growth rate of 2.37 nm/s, a high crystalline fraction of 86%, a vertically aligned columnar structure with the preferential (111) growth orientation and embedded Si quantum dots, as well as a clean, smooth and defect-free interface. We also propose the formation mechanism of nc-Si thin films which relates the high electron density and other unique properties of the inductively coupled plasmas and the formation of the nanocrystalline phase on the Si surface.

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ID Code: 73930
Item Type: Journal Article
Refereed: Yes
Additional URLs:
DOI: 10.1021/cg900176c
ISSN: 1528-7483
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 15 Jul 2014 01:14
Last Modified: 16 Jul 2014 00:14

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