Plasma-deposited Ge nanoisland films on Si : is Stranski–Krastanow fragmentation unavoidable?

Levchenko, I., Ostrikov, K., & Murphy, A.B. (2008) Plasma-deposited Ge nanoisland films on Si : is Stranski–Krastanow fragmentation unavoidable? Journal of Physics D : Applied Physics, 41(9), 092001-1.

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The formation of Ge quantum dot arrays by deposition from a low-temperature plasma environment is investigated by kinetic Monte Carlo numerical simulation. It is demonstrated that balancing of the Ge influx from the plasma against surface diffusion provides an effective control of the surface processes and can result in the formation of very small densely packed quantum dots. In the supply-controlled mode, a continuous layer is formed which is then followed by the usual Stranski-Krastanow fragmentation with a nanocluster size of 10 nm. In the diffusion-controlled mode, with the oversupply relative to the surface diffusion rate, nanoclusters with a characteristic size of 3 nm are formed. Higher temperatures change the mode to supply controlled and thus encourage formation of the continuous layer that then fragments into an array of large size. The use of a high rate of deposition, easily accessible using plasma techniques, changes the mode to diffusion controlled and thus encourages formation of a dense array of small nanoislands.

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ID Code: 73950
Item Type: Journal Article
Refereed: Yes
Additional URLs:
DOI: 10.1088/0022-3727/41/9/092001
ISSN: 0022-3727
Divisions: Current > QUT Faculties and Divisions > Science & Engineering Faculty
Deposited On: 16 Jul 2014 00:18
Last Modified: 16 Jul 2014 23:07

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